Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
复制标题
Ge , Si , O 注入 SiO2 层中的阴极发光衰变动力学
DOI：
10.1016/j.jnoncrysol.2003.08.080
复制
发表时间：
2003
影响因子：
3.5
通讯作者：
B. Schmidt
中科院分区：
文献类型：
--
作者：
A. Trukhin;J. Jansons;H. Fitting;T. Barfels;B. Schmidt
SiO2 和 GeO2 的不同晶体和非晶变体的阴极发光光谱形状和各自的带衰减时间显示出发光中心之间没有相似性。另一方面，通过将氧注入到 SiO2 层中额外产生的红色发光中心（650 nm）与化学计量的 SiO2 具有相同的性质，并且归因于非桥接氧空穴中心（NBOHC）。另一方面，Si 注入的 SiO2 中增强的蓝色发光 (460 nm) 也属于与硅相关的缺氧中心 (SiODC)，与化学计量层中一样。 Ge 注入 SiO2 和热后退火会产生巨大的紫光 (400 nm)，第一次快速衰减为 τ≈24 ns，随后是 t−0.15…t−0.54 的缓慢双曲线衰减。最后 10% 再次显示指数衰减，平均寿命 τ≈125 μs。这个复杂的发光中心与在热处理过程中通过Ge团簇形成而形成的GeODC中心有关。
Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2layers are of the same nature as in stoichiometric SiO2and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2and thermal post-annealing leads to a huge violet luminescence (400 nm) with a first rapid decay of τ≈24 ns followed by a slow hyperbolic decay with t−0.15…t−0.54. The last 10% show again an exponential decay with a mean life time τ≈125 μs. This complex luminescent center is related to the GeODC center formed during the thermal treatment by Ge cluster formation.