Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
复制标题
使用氮化原生氧化物栅极绝缘体的自对准锗 MOSFET
DOI：
10.1109/55.20421
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发表时间：
1988
影响因子：
4.9
通讯作者：
Suzanne C. Martin
中科院分区：
文献类型：
--
作者：
James J. Rosenberg;Suzanne C. Martin
报道了利用天然氮化氧化锗栅极绝缘体制备自对准锗mosfet的方法和性能。基于器件特性，300 K时的通道迁移率估计为940 cm/sup 2//Vs。共源特性表现出良好的饱和和关断，并且不表现出环路或其他异常。这些结果表明，将锗mosfet与光电二极管集成在1.3 μ m波长的单片光纤接收器上是可能的。结果还表明，锗相对于硅表现出的体积迁移率优势在一定程度上延续到了FET的沟道迁移率上
The fabrication and performance of dummy-gate self-aligned germanium MOSFETs utilizing a native germanium oxynitride gate insulator is reported. Based on device characteristics, channel mobility at 300 K is estimated as 940 cm/sup 2//Vs. Common-source characteristics show good saturation and turn-off, and do not exhibit looping or other anomalies. It is felt these results suggest that integration of germanium MOSFETs with photodiodes for monolithic optical-fiber receivers operating at 1.3- mu m wavelength should be possible. The results also indicate that the bulk mobility advantage which germanium exhibits relative to silicon carries over in some measure to FET channel mobility.<<ETX>>