Effects of plasma and/or 193 nm excimer‐laser irradiation in chemical‐vapor deposition of boron films from B2H6+He
Effects of plasma and/or 193 nm excimer‐laser irradiation in chemical‐vapor deposition of boron films from B2H6+He
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等离子体和/或 193 nm 准分子激光照射对 B2H6+He 硼膜化学气相沉积的影响
DOI：
10.1063/1.350499
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发表时间：
1992
影响因子：
3.2
通讯作者：
Y. Moriyoshi
中科院分区：
文献类型：
--
作者：
S. Komatsu;M. Kasamatsu;K. Yamada;Y. Moriyoshi
采用等离子体增强化学气相沉积（PECVD）技术，表面经 193 nm、50 Hz 脉冲激光照射，在 200 Pa 压力下由 B2H6+He 合成硼薄膜，等离子体用于产生生长所需的前体自由基，而照射则用于光化学增强迁移和生长反应等表面过程。除了PECVD之外，还进行了无照射的PECVD以及有和无照射的热解CVD，以阐明CVD中等离子体和激光的效果。发现微形硼柱向激光方向生长，这直接表明在每脉冲 170 mJ/cm2 的激光能量密度下，表面生长反应得到光化学增强。据估计，在此能量密度下照射对表面的加热可以忽略不计。在热解CVD中，前体自由基的表面迁移被认为相对较晚......
Plasma‐enhanced chemical‐vapor deposition (PECVD) with the surface irradiated by a 193 nm, 50 Hz pulsating laser was performed to synthesize boron films from B2H6+He at a pressure of 200 Pa, where the plasma was employed to generate precursor radicals for the growth while the irradiation was intended for photochemical enhancement of the surface processes such as migration and growth reactions. In addition to the PECVD, PECVD without the irradiation as well as pyrolytic CVD with and without the irradiation were done so as to clarify the effects of the plasma and the laser in the CVD. Micromorphological boron columns were found to grow toward the laser light, and this indicated directly that the surface growth reactions were enhanced photochemically at the laser energy density of 170 mJ/cm2 per pulse. Heating of the surface by the irradiation at this energy density was estimated to be negligible. In the pyrolytic CVD, where the surface migration of the precursor radicals was considered to be relatively hind...