Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates
Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates
复制标题
Si(111)衬底上硅化钛生长形貌的扫描隧道显微镜研究
DOI：
10.1063/1.359747
复制
发表时间：
1995
影响因子：
3.2
通讯作者：
M. Welland
中科院分区：
文献类型：
--
作者：
A. Stephenson;M. Welland
用超高真空扫描隧道显微镜研究了在Si(111)衬底上生长的超薄硅化钛薄膜的生长、形貌和表面原子结构。微观结构的考虑已经被用来确定硅化物生长的不同阶段。在85 0 °C形成的硅化钛微晶小面的原子分辨率图像被鉴定为c5 4-TiSi2(0 10)表面的2×2硅端。提供了可能的外延硅化物/硅关系。从理论上考虑了C54-TiSi2晶格中的原子间键，并计算了理想终止硅化物平面的悬挂键密度。在1200 °C下形成的大微晶的高度重构的原子平面被指定为C54-TiSi2(311)面，给出了C54-TiSi2(311)∥Si(111)的外延关系。具有相同取向的缺陷对和线型链的存在归因于双原子气体的分解。
A scanning tunneling microscope in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(111) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Atomic resolution images of a titanium silicide crystallite facet, formed at 850 °C, have been identified as a 2×2 silicon termination of a C54‐TiSi2(010) surface. Possible epitaxial silicide/silicon relationships are provided. Theoretical consideration has been given to the interatomic bonding in the C54‐TiSi2 lattice and the dangling bond density of ideally terminated silicide planes has been calculated. The highly reconstructed atomically flat surface of a large crystallite, formed at 1200 °C, has been assigned as a C54‐TiSi2(311) plane giving the epitaxial relation C54‐TiSi2(311)∥Si(111). The presence of pairs and linear chains of defects, with common orientations, is attributed to the decomposition of a diatomic ga...