A study of the thin film bulk acoustic resonator filters in several ten GHz band
A study of the thin film bulk acoustic resonator filters in several ten GHz band
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数十GHz频段薄膜体声谐振滤波器的研究
DOI：
10.1109/ultsym.2009.5441576
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Y. Satoh
中科院分区：
文献类型：
--
作者：
M. Hara;T. Yokoyama;T. Sakashita;M. Ueda;Y. Satoh
研制了第一个使用薄膜体声谐振器（FBARs）的K到Ka波段滤波器。该滤波器为阶梯型滤波器，配置气隙型fbar，采用基于Butterworth-Van-Dyke （BVD）模型的等效电路设计。K滤波器的中心频率、分数带宽、最小插入损耗和带外抑制分别为23.8 GHz、3.4%、−3.8 dB和−13 dB， Ka滤波器的中心频率、3.4%、−3.8 dB和−11 dB。K波段FBAR的谐振频率为24.7 GHz，谐振Q值为285 GHz，抗谐振Q值为291 GHz，有效机电耦合系数keff2为6.0%。此外，还推导并实验验证了损耗与谐振频率和电容比的乘积成正比。这种关系允许FBAR滤波器的限制，以讨论更高的频率。
The first K to Ka band filters using thin film bulk acoustic resonators (FBARs) have been developed. The filters are ladder type filters configured with air-gap type FBARs and designed using an equivalent circuit based on a Butterworth-Van-Dyke (BVD) model. Center frequency, fractional bandwidth, minimum insertion loss and suppression in out-band were 23.8 GHz, 3.4%, −3.8 dB and −13 dB in the K band filter, and were 29.2 GHz, 3.4%, −3.8 dB and −11 dB in the Ka band filter, respectively. 24.7 GHz in resonant frequency, 285 in resonant Q, 291 in anti-resonant Q and 6.0% in effective electro-mechanical coupling coefficient keff2 were obtained in the K band FBAR. Additionally, it was derived and verified experimentally that the loss is proportional to the product of the resonant frequency and the capacitance ratio in the FBAR. This relation allowed the limitation of the FBAR filter to be discussed for higher frequencies.