Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters
Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters
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DOI：
10.1088/0022-3727/39/23/015
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
Z. Zhu;P. Bhattacharya;E. Plis;X. Su;S. Krishna
中科院分区：
文献类型：
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作者：
Z. Zhu;P. Bhattacharya;E. Plis;X. Su;S. Krishna
InAs/GaSb型应变层超晶格（SLS）光伏红外（IR）探测器是目前中长波红外探测的热点。研究了一种通过在传统的InAs/GaSb SLS中插入共振隧穿势垒来减小探测器暗电流的新技术。GaSb/InAs/GaSb共振隧穿双势垒异质结构被设计成周期性地插入到传统的InAs/GaSb SLS探测器中，以阻挡热激发电子，同时允许光激发电子隧穿。在77 K时，隧道式InAs/GaSb SLS探测器在整个负偏置范围内的暗电流密度比传统SLS探测器低约3.8倍。在84 K时，隧道探测器的Johnson-noise-limited detection（测量波长为4µm）比传统探测器高18%。传统的和隧道式SLS探测器都能在高达300 K的高温下工作。
InAs/GaSb type-II strained-layer superlattice (SLS) photovoltaic infrared (IR) detectors are currently of great interest for mid- and long-wave IR detection. A novel technique of reducing detector dark current by inserting resonant tunnelling barriers into a conventional InAs/GaSb SLS is investigated. The GaSb/InAs/GaSb resonant tunnelling double barrier heterostructure was designed to be periodically inserted into a conventional InAs/GaSb SLS detector to block thermally excited electrons, while permitting photo-excited electrons to tunnel through. The measured dark current density of the tunnelling InAs/GaSb SLS detector in the entire negative bias range is lower than that of the conventional SLS detector by a factor of about 3.8 at 77 K. At 84 K, the Johnson-noise-limited detectivity of the tunnelling detector, measured at 4 µm, is 18% higher than that of the conventional detector. Both the conventional and the tunnelling SLS detectors demonstrated high-temperature operation, up to 300 K.