222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
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DOI：
10.1002/pssa.200880961
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发表时间：
2009-06-01
影响因子：
2
通讯作者：
Kamata, Norihiko
中科院分区：
文献类型：
--
作者：
Hirayama, Hideki;Fujikawa, Sachie;Kamata, Norihiko
我们展示了222-282 nm AlGaN和InAlGaN基深紫外（DUV）发光二极管（LED）上低穿透位错密度（TDD）AlN模板制造。采用氨气脉冲流多层膜生长技术制备了低TDD AlN模板。AlN层的刃型和螺旋型位错密度分别降低到7.5 × 10（8）和3.8 × 10（7）。在222-273 nm的AlGaN多量子阱深紫外发光二极管中获得了单峰电致发光。在室温连续工作条件下，波长为241 nm和256 nm的AlGaN量子阱LED的最大输出功率分别为1.1 mW和4.0 mW。在室温脉冲条件下，227 nm和222 nm AlGaN量子阱的最大输出功率分别为0.15 mW和0.014 mW。227 nm和250 nm AlGaN LED的最大外量子效率（EQE）分别为0.2%和0.43%。我们还制作了280 nm波段的四元InAlGaN-MQW深紫外发光二极管与n型和p型InAlGaN层ML-AlN模板。我们证明了284 nm InAlGaN-QW发射极高的内量子效率（IQE），这是由RT-PL与77 K-PL的积分强度之比为86%的事实所证实的。在RT CW操作下，282 nm InAlGaN LED的最大输出功率和EQE分别为10.6 mW和1.2%。(C)2009 WILEY-VCH Veriag GmbH & Co. KGaA，魏因海姆
We demonstrate 222-282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. The edge- and screw-type dislocation densities of AlN layer were reduced to 7.5 x 10(8) and 3.8 x 10(7), respectively. Single-peaked electroluminescence (EL) were obtained for 222-273 nm AlGaN multi quantum well (MQW) DUV-LEDs. We obtained the maximum output power of 1.1 mW and 4.0 mW for the AlGaN-QW LEDs with wavelengths of 241 nm, 256 nm, respectively, under room temperature (RT) CW operations. The maximum output power of 227 nm and 222 nm AlGaN-QW were 0.15 mW and 0.014 mW, respectively, under RT pulsed operation. The maximum external quantum efficiency (EQE) of the 227 nm and 250 nm AlGaN LEDs were 0.2% and 0.43%, respectively. We also fabricated 280 nm band quaternary InAlGaN-MQW DUV-LEDs with n-type and p-type InAlGaN layers on ML-AlN templates. We demonstrated extremely high internal quantum efficiency (IQE) of 284 nm InAlGaN-QW emission, which was confirmed by the fact that the ratio of the integrated intensity of the RT-PL against the 77 K-PL was 86%. The maximum output power and EQE of the 282 mn InAlGaN LED were 10.6 mW and 1.2%, respectively, under RT CW operation. (C) 2009 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim