Chemical and electronic properties of sulfur-passivated InAs surfaces
Chemical and electronic properties of sulfur-passivated InAs surfaces
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DOI：
10.1016/s0039-6028(02)02411-1
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发表时间：
2003-01-20
期刊：
影响因子：
1.9
通讯作者：
Whitman, LJ
中科院分区：
文献类型：
--
作者：
Petrovykh, DY;Yang, MJ;Whitman, LJ
用硫化铵（（NH_4）（2）S-x）溶液处理InAs（001）表面，得到具有良好化学和电子性质的模型钝化InAs（001）表面。钝化有效地去除氧化物和污染物，以最小的表面蚀刻，并产生共价键合的硫层，在环境空气和各种水溶液中具有良好的短期稳定性，其特征在于通过X射线光电子能谱，原子力显微镜和霍尔测量。硫钝化也保留了表面电荷积累层，增加了相关的向下能带弯曲。(C)2002 Elsevier Science B. V.保留所有权利。
Treatment with ammonium sulfide ((NH4)(2)S-x) Solutions is used to produce model passivated InAs(001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants, with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and Hall measurements. The sulfur passivation also preserves the surface charge accumulation layer, increasing the associated downward band bending. (C) 2002 Elsevier Science B.V. All rights reserved.