Near-field optical mapping of exciton wave functions in a GaAs quantum dot
Near-field optical mapping of exciton wave functions in a GaAs quantum dot
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DOI：
10.1103/physrevlett.91.177401
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发表时间：
2003-10-24
影响因子：
8.6
通讯作者：
Takagahara, T
中科院分区：
文献类型：
--
作者：
Matsuda, K;Saiki, T;Takagahara, T
介绍了天然GaAs量子点的近场光致发光成像光谱。由于空间分辨率提高到30 nm，我们成功地绘制出了限制在GaAs量子点中的激子在真实的空间中的质心波函数。因此，我们发现，激子发射的空间分布，这反映了一个单层高岛的形状，不同于双激子发射，由于激子和双激子复合的极化场的不同分布。这种新技术可以广泛应用于量子器件设计和制造中的波函数工程。
Near-field photoluminescence imaging spectroscopy of naturally occurring GaAs quantum dots (QDs) is presented. We successfully mapped out center-of -mass wave functions of an exciton confined in a GaAs QD in real space due to the enhancement of spatial resolution up to 30 nm. As a consequence, we discovered that the spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations. This novel technique can be extensively applied to wave function engineering in the design and the fabrication of quantum devices.