THE EFFECT OF ELECTRIC FIELD ON THE EXCITONIC STATES IN COUPLED QUANTUM WELL STRUCTURES
THE EFFECT OF ELECTRIC FIELD ON THE EXCITONIC STATES IN COUPLED QUANTUM WELL STRUCTURES
复制标题
电场对耦合量子阱结构中激子态的影响
DOI：
--
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
R. Ito
中科院分区：
文献类型：
--
作者：
Y. Takahashi;Y. Kato;S. Kano;S. Fukatsu;Y. Shiraki;R. Ito
本文采用不可分的非球形类氢试探波函数，用变分法计算了GaAs/AlGaAs对称耦合量子阱结构中的激子态。激子的结合能已被计算为外电场的函数，为各种阱和势垒宽度。非球形试探波函数比球形试探波函数能更好地估计激子结合能，特别是在高电场下。计算表明，结合能强烈依赖于外电场：变化（增加或减少）与波函数的空间分布有关。计算结果与实验结果一致。
We have calculated by a variational procedure the excitonic states in symmetric coupled quantum well structures of GaAs/AlGaAs in the presence of an external electric field perpendicular to the interfacial plane using a nonseparable, nonspherical hydrogenic trial wavefunction. The exciton binding energies have been calculated as a function of external electric field for various well and barrier widths. The nonspherical trial wavefunction leads to a better estimate of the exciton binding energy, especially in high electric field, than that calculated with a spherical one. The calculations show that the binding energy is strongly dependent on the external electric fields: the variation (increase or decrease) is related to the spatial distribution of the wavefunctions. The results of the calculation are consistent with our experimental results.