AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition
AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition
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DOI：
10.1016/s0022-0248(98)00668-x
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发表时间：
1998-12-01
影响因子：
1.8
通讯作者：
Kawai, H
中科院分区：
文献类型：
--
作者：
Nakamura, F;Hashimoto, S;Kawai, H
研究了低压金属有机化学气相沉积生长AlGaN过程中tma - bow速率和反应器压力对Al含量的依赖关系。我们发现TMA分压的降低对Al含量的降低是有效的。为了将AlN和AlGaN薄膜应用于器件，我们制作了一个绝缘栅异质结构场效应晶体管（IG-HFET）。氮化镓上4纳米厚的氮化镓原子力显微镜图像显示了一个由大约500纳米大小的颗粒组成的粗糙表面。在IG-HFET工作过程中，晶界可能是栅极和漏极之间漏电流的来源。然而，当L-g = 1.4 μ m时，该装置可以在235 mS mm（-1）的跨导g(m)下工作。(C) 1998 Elsevier Science B.V.。
In AlGaN growth using low-pressure metalorganic chemical vapor deposition the TMA-Bow-rate dependence and reactor-pressure dependence on the Al content were investigated. We found that the reduction of partial pressure of TMA is effective in preventing the reduction of the Al content. To apply AlN and AlGaN films to devices, we fabricated an insulated gate heterostructure field effect transistor (IG-HFET). The AFM image of 4 nm-thick AIN on GaN shows a rough surface composed of approximately 500 nm-size grains. The grain boundary may be the origin of the leakage current between gate and drain during the operation of the IG-HFET. Nevertheless, the device can operate with transconductance g(m) of 235 mS mm(-1) for L-g = 1.4 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.