Quantum dot infrared photodetectors
Quantum dot infrared photodetectors
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DOI：
10.1063/1.1337649
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发表时间：
2001-01-01
影响因子：
4
通讯作者：
Fafard, S
中科院分区：
文献类型：
--
作者：
Liu, HC;Gao, M;Fafard, S
在GaAs衬底上生长了自组装应变半导体纳米结构，用于制备量子点红外探测器。状态填充光致发光实验已被用来探测的零维状态，并揭示了四个类原子壳（S，P，D，F）与激子能级间的能量间隔被调整到类似于60毫电子伏。较低的电子壳层填充的载流子通过n掺杂的异质结构，从被占领的量子点状态的润湿层或连续态的转换导致在红外光电探测。我们演示了宽带正入射检测与几百mA/W的响应度在检测波长类似to 5妈妈。(C)2001年美国物理学会。
Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to similar to 60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of similar to5 mum. (C) 2001 American Institute of Physics.