Modeling and simulation of sublimation growth of SiC bulk single crystals
Modeling and simulation of sublimation growth of SiC bulk single crystals
复制标题
SiC块状单晶升华生长的建模与仿真
DOI：
10.4171/ifb/101
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发表时间：
2004
影响因子：
1
通讯作者：
J. Sprekels
中科院分区：
文献类型：
--
作者：
O. Klein;P. Philip;J. Sprekels
利用物理气相输运（PVT）方法建立了碳化硅单晶升华生长的瞬态数学模型。气相模型由质量、动量和能量平衡方程以及反应扩散方程组成。由于物理和化学反应，气相被自由边界包围。在生长系统的各种固体组分中考虑了非线性热传递方程。不连续和非局部界面条件的制定，以说明气体和固体之间的温度步骤，以及扩散-灰色辐射传热腔表面之间。利用磁标量势建立了轴对称感应加热模型。对于由模型引起的非线性演化问题，给出了有限体积格式，并给出了离散的存在唯一性结果。最后给出了与物理生长过程有关的瞬态数值实验结果并进行了分析。
We present a transient mathematical model for the sublimation growth of silicon carbide (SiC) single crystals by the physical vapor transport (PVT) method. The model of the gas phase consists of balance equations for mass, momentum, and energy, as well as reaction-diffusion equations. Due to physical and chemical reactions, the gas phase is encompassed by free boundaries. Nonlinear heat transport equations are considered in the various solid components of the growth system. Discontinuous and nonlocal interface conditions are formulated to account for temperature steps between gas and solid as well as for diffuse-gray radiative heat transfer between cavity surfaces. An axisymmetric induction heating model is devised using a magnetic scalar potential. For a nonlinear evolution problem arising from the model, a finite volume scheme is stated, followed by a discrete existence and uniqueness result. We conclude by presenting and analyzing results of transient numerical experiments relevant to the physical growth process.