Nuclear microprobe imaging of single-event upsets
Nuclear microprobe imaging of single-event upsets
复制标题
单粒子扰动的核微探针成像
DOI：
10.1109/23.120129
复制
发表时间：
1992
影响因子：
1.8
通讯作者：
F. Sexton
中科院分区：
文献类型：
--
作者：
K. M. Horn;B. Doyle;F. Sexton
已经开发出一种成像技术，它可以产生微米分辨率的地图，显示在集成电路的离子辐照过程中发生单粒子翻转的位置。根据这些“颠倒图像”，可以直接确定电路中容易颠倒的元件的身份和大小。利用扫描核微探头，这种成像技术选择性地暴露集成电路最底层的功能单元(例如晶体管漏极、栅极)，并立即测量高能离子撞击对电路性能的影响。关于集成电路辐射硬度的信息(即总剂量响应和阈值翻转LET)，以前是在电路级别获取的，也可以在单个晶体管级别测量。如此详细的空间特征，为研究集成电路中的单粒子翻转过程提供了一种新的精密诊断技术。>；
An imaging technique has been developed which produces micron-resolution maps of where single-event upsets occur during ion irradiation of integrated circuits. From these 'upset images' the identity and size of a circuit's upset-prone components can be directly determined. Utilizing a scanning nuclear microprobe, this imaging technique selectively exposes the lowest functional units of an integrated circuit (e.g. transistor drains, gates) and immediately measures the effect of a high-energy ion strike on circuit performance. Information about an integrated circuit's radiation hardness (i.e. total dose response and threshold upset LET), which has previously been acquired at the circuit level, can also be measured at the individual transistor level. Such detailed spatial characterization, provides a novel precision diagnostic technique with which to study single-event upset processes in integrated circuits. >