Stability of hydrogenated amorphous carbon thin films for application in electronic devices
Stability of hydrogenated amorphous carbon thin films for application in electronic devices
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DOI：
10.1016/j.diamond.2018.10.016
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发表时间：
2018-11-01
影响因子：
4.1
通讯作者：
Paul, Shashi
中科院分区：
文献类型：
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作者：
Alotaibi, Sattam;Manjunatha, Krishna Nama;Paul, Shashi
在这项研究中，氢化非晶碳（a-C：H）薄膜作为绝缘层的电子应用进行了研究。采用射频等离子体增强化学气相沉积（RF-PECVD）技术在室温下制备了a-C：H薄膜。首次研究了a-C：H薄膜的电学和光学性质随退火温度的变化规律。这项研究表明，a-C：H薄膜在高达450 ℃的温度下是稳定的。这项研究将有助于使用a-C：H膜作为绝缘层，其中半导体有源层在较高温度下沉积（例如，对于薄膜晶体管TFT，非晶硅在300摄氏度左右沉积）。除了了解退火的a-C：H薄膜的电学和光学性质外，我们还进一步探索和研究了其在Flash型存储器件中的适用性。各种形式的类金刚石碳被认为具有高的耐化学性;在文献中没有关于这个主题的广泛数据。a-C的稳定性：H薄膜与各种反应性化学品，通常用于有机/可印刷电子器件，也在这项工作中进行了研究。这些发现可能为在混合有机-无机电子器件中采用/集成a-C：H提供机会。
In this study, hydrogenated amorphous carbon (a-C:H) films are investigated for electronic applications as an insulating layer. a-C:H films were deposited using Radio Frequency-Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique at room temperature. For the first time, the properties of a-C:H films as a function of annealing temperature is investigated, with a focus on their electrical and optical properties. This study shows that a-C:H films are stable up to 450 degrees C. This investigation will facilitate the use of a-C:H films as an insulating layer where the semiconductor active layers are deposited at higher temperatures (e.g. amorphous silicon deposited around 300 degrees C for thin film transistor TFTs). In addition to understanding the electrical and optical properties of annealed a-C:H films, we have further explored and studied its suitability in Flash-type memory devices. Various forms of diamond-like carbon are considered to have a high chemical resistance; no extensive data are available in the literature on this subject. The stability of a-C: H thin films with various-reactive chemicals, commonly used in organic/printable electronic devices, is also investigated in this work. The findings may provide opportunities for adoption/integration of a-C:H in hybrid organic-inorganic electronic devices.