Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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DOI：
10.1021/nl904092h
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发表时间：
2010-04-01
期刊：
影响因子：
10.8
通讯作者：
Lu, Wei
中科院分区：
文献类型：
--
作者：
Jo, Sung Hyun;Chang, Ting;Lu, Wei
忆阻器是一种两端电子器件，其电导可以通过电荷或通量精确调制。在这里，我们实验演示了纳米硅基忆阻器器件，并表明由互补金属氧化物半导体神经元和忆阻器突触组成的混合系统可以支持重要的突触功能，如尖峰时间依赖的可塑性。在神经形态电路中使用忆阻器作为突触可以潜在地提供高效计算所需的高连接性和高密度。
A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.