Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers
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DOI：
10.1016/j.mssp.2006.01.033
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发表时间：
2006-02
影响因子：
4.1
通讯作者：
H. Sugimoto;M. Tajima;T. Eguchi;I. Yamaga;T. Saitoh
中科院分区：
文献类型：
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作者：
H. Sugimoto;M. Tajima;T. Eguchi;I. Yamaga;T. Saitoh
采用室温光致发光光谱和成像技术研究了铸造多晶硅片中的晶内缺陷对太阳电池性能的影响。我们证实了多晶硅的较长扩散长度区域的结晶度几乎与单晶硅的结晶度相同。对于PL宏观映射，低PL强度区域对应于短扩散长度区域。在短扩散长度区域，PL显微成像观察到大量的暗线和暗点，而相比之下，长扩散长度区域则很少。这些发现清楚地表明PL映射的暗线和斑点与降低电池性能的缺陷有关。我们还发现，缺陷的结构依赖于制造工艺。
Effects of intra-grain defects in cast polycrystalline silicon (poly-Si) wafers on the solar cell performance were investigated by photoluminiscence (PL) spectroscopy and mapping at room temperature. We confirmed that the crystallinity of the longer diffusion length region of the poly-Si is almost the same as that of the single crystalline Si. For the PL macroscopic mapping, low PL intensity regions correspond to short diffusion length regions. In short diffusion length regions, plenty of dark lines and spots were observed by PL microscopic mapping, while, in contrast, longer diffusion length regions have few of them. These findings showed clearly that dark lines and spots of the PL mapping relate to defects degrading the cell performance. We also found that structures of defects depend on the fabrication process.