Modeling the Well-Edge Proximity Effect in Highly Scaled MOSFETs
Modeling the Well-Edge Proximity Effect in Highly Scaled MOSFETs
复制标题
对高尺寸 MOSFET 中的井边邻近效应进行建模
DOI：
10.1109/ted.2006.884070
复制
发表时间：
2006
影响因子：
3.1
通讯作者：
S. Liu
中科院分区：
文献类型：
--
作者：
Y. Sheu;Ke;S. Tian;Sheng;Chih;Ming;S. Liu
从物理和工艺的角度探讨了高尺度CMOS技术注入过程中离子散射引起的井边邻近效应。通过计算机辅助设计（TCAD）技术模拟和硅片实验来研究这种效应的影响。离子散射模型和TCAD模拟提供了对mosfet内部变化形成的物理理解。提出了一种新的基于物理的SPICE紧凑模型，并使用实验硅测试装置进行了校准
The well-edge proximity effect caused by ion scattering during implantation in highly scaled CMOS technology is explored from a physics and process perspective. Technology computer-aided design (TCAD) simulations together with silicon wafer experiments have been conducted to investigate the impact of this effect. The ion scattering model and TCAD simulations provided a physical understanding of how the internal changes of the MOSFETs are formed. A new compact model for SPICE is proposed using physics-based understanding and has been calibrated using experimental silicon test sets