Model of the field‐effect quantum‐well laser with free‐carrier screening and valence band mixing
Model of the field‐effect quantum‐well laser with free‐carrier screening and valence band mixing
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具有自由载流子屏蔽和价带混合的场效应量子阱激光器模型
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
S. Chuang
中科院分区：
文献类型：
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作者：
D. Ahn;S. Chuang
从理论上研究了自由载流子筛选和价带混合对场效应量子阱激光器增益开关特性的影响。我们的分析基于多波段有效质量理论和考虑带内弛豫的密度矩阵形式。我们通过用泊松方程同时求解包络函数的多带有效质量方程来计算量子阱的电子结构。研究发现，当栅极场在量子阱上施加时，自由载流子筛选通过减少量子阱中的电场和电荷分离，显著地影响了电子特性（带结构和波函数）和增益开关特性。
The effects of free‐carrier screening and valence band mixing on gain‐switching characteristics of the field‐effect quantum‐well laser are studied theoretically. Our analysis is based on the multiband effective mass theory and the density matrix formalism with the intraband relaxation taken into account. We calculate the electronic structure of the quantum well by solving simultaneously the multiband effective mass equations for the envelope functions with Poisson’s equation. It is found that the free‐carrier screening affects considerably both electronic properties (band structure and wave functions) and gain‐switching characteristics by reducing the electric field and charge separation in the quantum well when the gate field is applied across the quantum well.