Growth Kinetics of Monodisperse Cu-In-S Nanocrystals Using a Dialkyl Disulfide Sulfur Source
Growth Kinetics of Monodisperse Cu-In-S Nanocrystals Using a Dialkyl Disulfide Sulfur Source
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DOI：
10.1021/cm9015673
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发表时间：
2009-09-22
影响因子：
8.6
通讯作者：
Brutchey, Richard L.
中科院分区：
文献类型：
--
作者：
Norako, Michelle E.;Franzman, Matthew A.;Brutchey, Richard L.
以二叔丁基二硫醚为硫源，采用溶液法合成了结构规整、单分散的纤锌矿型Cu-In-S纳米晶。反应控制（即，配位溶剂、封端配体和硫源）被证明对于提供通向亚稳纤锌矿相的动力学途径是关键的。通过X射线粉末衍射和选区电子衍射证实了其晶相。首次在Cu-In-S系统上研究了纳米晶体的定量生长动力学，清楚地表明纳米晶体在生长的后期阶段经历稳态奥斯特瓦尔德熟化之前通过尺寸聚焦事件。尺寸聚焦的6.9 nm Cu-N-S纳米晶体具有E-g = 1.47 eV的光学带隙和E-g = 1.84 eV的电化学带隙。
Well-defined and monodisperse wurtzite Cu-In-S nanocrystals were synthesized via a solution-based method using di-tert-butyl disulfide as the sulfur source. Reaction control (i.e., coordinating solvent, capping ligand, and sulfur source) proved critical for providing a kinetic pathway to the metastable wurtzite phase. The crystal phase was confirmed by powder X-ray diffraction and selected area electron diffraction. Quantitative nanocrystal growth kinetics were studied on a Cu-In-S system for the first time, clearly showing that the nanocrystals pass through a size focusing event before undergoing steady-state Ostwald ripening at later stages of growth. The size-focused 6.9 nm Cu-N-S nanocrystals have an optical band gap of E-g = 1.47 eV and an electrochemical band gap of E-g = 1.84 eV.