High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers
High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers
复制标题
使用锐钛矿 TiO2 种子层在玻璃上形成多晶 Ta 掺杂 SnO2 薄膜，迁移率超过 80 cm2 V-1 s-1
DOI：
10.1143/apex.3.031102
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发表时间：
2010
影响因子：
2.3
通讯作者：
T. Hasegawa
中科院分区：
文献类型：
--
作者：
S. Nakao;N. Yamada;T. Hitosugi;Y. Hirose;T. Shimada;T. Hasegawa
采用脉冲激光种子层沉积技术在玻璃衬底上生长了高迁移率掺ta的SnO2 （TTO）薄膜。研究发现，使用10纳米厚的多晶锐钛矿TiO2种子层可导致（200）取向TTO薄膜的首选生长，与直接在玻璃衬底上生长的薄膜相比，载流子密度增加了30%，迁移率提高了两倍以上。获得的最高迁移率为83 cm2 V-1 s-1，电阻率为2.8×10-4 Ω cm，而电阻率最低为1.8×10-4 Ω cm的薄膜的迁移率为60 cm2 V-1 s-1。
High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2.8×10-4 Ω cm, whereas the film with the lowest resistivity of 1.8×10-4 Ω cm had a mobility of 60 cm2 V-1 s-1.