The characteristics of Ib diamond crystals synthesized in a Fe-Ni-C system with different SiC contents
The characteristics of Ib diamond crystals synthesized in a Fe-Ni-C system with different SiC contents
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不同SiC含量Fe-Ni-C体系合成Ib金刚石晶体的特性
DOI：
10.1039/d1ce00590a
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发表时间：
2021
期刊：
影响因子：
3.1
通讯作者：
Jia Xiaopeng
中科院分区：
文献类型：
--
作者：
Wang Yongkui;Wang Zhiwen;Lu Zhiyun;Cai Zhenghao;Fang Shuai;Zhao Hongyu;Jia Hongsheng;Ma Hongan;Chen Liangchao;Jia Xiaopeng
碳化硅（SiC）是天然金刚石内含物中发现的一种物质。分析SiC掺杂对人造金刚石性能的影响，对于理解天然金刚石的生长机制和地幔物质组成具有重要意义。本文采用国产大体积立方高压装置（SPD-6 × 1200）模拟金刚石生长的高温高压环境。在5.8GPa压力和1650-1670 K温度范围内，研究了不同SiC掺杂量对Fe Ni C体系中合成的Ib型金刚石晶体特性的影响。采用光学显微镜（OM）、傅里叶变换红外光谱（FTIR）、拉曼光谱（拉曼）、X射线光电子能谱（XPS）和光致发光光谱（PL）对合成的晶体进行了表征。OM结果表明，随着掺杂浓度的增加，金刚石的生长速率逐渐降低，颜色由黄色变为浅黄色。FTIR结果表明，氮元素主要以单原子形式（C心）存在于金刚石晶体中。随着SiC掺杂剂比例的增加，金刚石中的氮含量从275 ppm逐渐降低到115 ppm。拉曼光谱数据表明，金刚石晶体的半高宽（FWHM）随着掺杂比的增加而增加。XPS结果表明，硅已成功地进入金刚石晶格中的Si-C键在晶体中。PL结果表明，合成的金刚石晶体中的氮空位（NV-）色心（638 nm）的峰值强度随着掺杂比例的增加而增加。随着SiC掺杂量的增加，出现了NV 0色心（575 nm）的峰，并且峰强度增加。
Silicon carbide (SiC) is a substance found in natural diamond inclusions. Analyzing the influence of SiC doping on the properties of synthetic diamonds is vital to understanding the growth mechanism of natural diamonds and the material composition of the mantle. In this work, China-type large volume cubic high-pressure apparatus (CHPA) (SPD-6 × 1200) was used to simulate the high-temperature and high-pressure environment of diamond growth. The influence of different SiC doping contents on the crystal characteristics of a Ib-type diamond synthesized in a Fe–Ni–C system was investigated at a pressure of 5.8 GPa and a temperature range of 1650–1670 K. Optical microscopy (OM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS), and photoluminescence spectroscopy (PL) were used to characterize the synthesized crystals. The OM results show that the growth rate of the diamond decreases gradually, and the color changes from yellow to light yellow with an increase in the doping concentration. The FTIR results indicate that the nitrogen element in the crystal mainly appears in the diamond crystal in monatomic form (C center). The nitrogen content in the diamond gradually decreases from 275 ppm to 115 ppm with an increase in the SiC dopant ratio. The Raman data show that the FWHM (full width at half maximum) of the diamond crystal increases with an increase in the doping ratio. The XPS results demonstrate that silicon has successfully entered the diamond lattice with a Si–C bond in the crystal. The PL results indicate that the peak intensity of the nitrogen-vacancy (NV−) color center (638 nm) in the synthesized diamond crystal increases as the doping ratio increases. As the SiC doping content increases, the peak of the NV0 color center (575 nm) appears, and the peak intensity increases.