Determining the lattice relaxation in semiconductor layer systems by x‐ray diffraction
Determining the lattice relaxation in semiconductor layer systems by x‐ray diffraction
复制标题
通过 X 射线衍射测定半导体层系统中的晶格弛豫
DOI：
10.1063/1.354578
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发表时间：
1993
影响因子：
3.2
通讯作者：
N. Andrew
中科院分区：
文献类型：
--
作者：
P. Fewster;N. Andrew
本文阐述了从X射线衍射空间映射和形貌中提取结构信息的过程。给出了残余应变、宏观倾斜、微观倾斜及其横向尺寸和界面缺陷引起的应变场破坏的测量方法。研究了GaAs衬底上部分弛豫的厚InGaAs层，发现弛豫和宏观倾斜是各向异性的，微观倾斜随厚度的增加而减小，界面破裂并不随弛豫的增加而继续增加。一个“马赛克晶粒生长”模型被假定为考虑到微观倾斜扩展的减少和层厚度的地形对比度的增加。
This paper illustrates the procedure for extracting structural information available from x‐ray diffraction space mapping and topography. The methods of measuring, the residual strain, macroscopic tilts, microscopic tilts and their lateral dimensions, and the strain field disruption emanating from the interfacial defects are presented. Partially relaxed thick InGaAs layers on GaAs substrates were studied and it was concluded that the relaxation and macroscopic tilting were anisotropic, the microscopic tilting reduced with thickness, and the interfacial disruption did not continue to increase with increasing relaxation. A ‘‘mosaic grain growth’’ model is postulated to account for the diminishing microscopic tilt spread and increasing topographic contrast with layer thickness.