Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires.
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires.
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DOI：
10.3389/fchem.2020.607481
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发表时间：
2020
影响因子：
5.5
通讯作者：
Jagadish C
中科院分区：
文献类型：
--
作者：
Jiang N;Joyce HJ;Parkinson P;Wong-Leung J;Tan HH;Jagadish C
半导体纳米线结构提供了机会，非平面电子和光电子学所产生的独特的几何形状。这种结构产生了一个大的表面积与体积比，因此了解纳米线表面对纳米线光电性能的影响是必要的工程相关的设备。我们提出了一个系统的研究的非均匀的光学性质的Au催化GaAs/AlGaAs核壳纳米线的侧壁刻面的变化。观察到线内光致发光（PL）强度和PL寿命（τPL）沿纳米线轴线沿着的显著变化，这与从基底到尖端从{112}到{110}的侧壁刻面的变化密切相关。在{112}取向的GaAs/AlGaAs界面附近发生更快的复合。一种替代的纳米线异质结构，径向量子阱管的GaAs层夹在两个AlGaAs势垒层，提出并展示了上级均匀性的PL发射沿着整个长度的纳米线。结果强调了纳米线刻面的重要性，并为纳米线器件设计提供了重要的见解。
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.