Growth kinetics and interface structure of copper silicides studied by atom probe tomography
Growth kinetics and interface structure of copper silicides studied by atom probe tomography
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原子探针断层扫描研究硅化铜的生长动力学和界面结构
DOI：
10.1002/pssc.201300370
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
G. Schmitz
中科院分区：
文献类型：
--
作者：
M. Ibrahim;B. Parditka;A.Fuhrich;Z.Balogh;P.Stender;Z. Erdélyi;G. Schmitz
激光辅助原子探针在分析嵌入的硅/金属界面方面显示出独特的潜力，这是因为它能够以原子分辨率提供三维信息。用该技术研究了三层样品铜/非晶态硅/铜的界面结构。非晶态硅(a-Si)沉积在铜上时，界面宽度为2.4 nm，发生了急剧的转变。相反，当铜沉积在a-Si上时，形成了宽得多的5.3 nm宽的混合区。只有在后一种情况下，短暂的退火才会导致Cu3Si立即形核。二次中性质谱仪独立地证实了这种不对称性的存在，并证明了硅化物的线性生长动力学。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Laser‐assisted atom probe shows a unique potential in the analysis of embedded Si/metal interfaces, owing to its ability to deliver 3D information with atomic resolution. The interface structures in tri‐layer specimens Cu/amorphous Si/Cu are investigated by this technique. For amorphous Si (a‐Si) deposited on Cu, a sharp transition occurred with an interface width of 2.4 nm. On the contrary, a much broader mixed zone, 5.3 nm wide, is formed when Cu is deposited on top of a‐Si. Only in the latter case, brief annealing leads to immediate nucleation of the Cu3Si. Secondary neutral mass spectrometry confirmed independently the existence of this asymmetry in phase formation and demonstrates linear growth kinetics of the silicide. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)