Radiation damage of gallium arsenide induced by reactive ion etching
Radiation damage of gallium arsenide induced by reactive ion etching
复制标题
反应离子刻蚀对砷化镓的辐射损伤
DOI：
10.1063/1.339125
复制
发表时间：
1987
影响因子：
3.2
通讯作者：
N. Toyoda
中科院分区：
文献类型：
--
作者：
T. Hara;Hidenori Suzuki;A. Suga;T. Terada;N. Toyoda
使用物理和电学分析研究了反应离子蚀刻 (RIE) 在砷化镓 (GaAs) 表面引起的辐射损伤。在射频功率为 300 W (0.47 W/cm2) 和 500 W (0.78 W/cm2) 时，卢瑟福背散射光谱法观察到的位移 Ga 和 As 原子数量分别为 7.8×1015 cm−2 和 1.3×1016 cm−2。在未损坏层上形成的肖特基电极的势垒高度为0.745V。该高度随着射频功率的增加而减小，并在0.78W/cm2时达到0.47V。 GaAs沟道层表面的载流子浓度随着射频功率的增加而降低。 400℃退火30分钟可减少损伤。例如，300W时势垒高度从0.47增加到0.70V，载流子浓度从7.0×1016增加到1.3×1017cm-3。然而，通过400℃退火，载流子浓度无法恢复到与未损坏层相同的水平。 GaAs 电极退火通常采用的温度...
Radiation damage induced in the surface of gallium arsenide (GaAs) by reactive ion etching (RIE)is studied using physical and electrical analyses. The number of displaced Ga and As atoms observed by Rutherford backscattering spectrometry aligned spectra is 7.8×1015 cm−2 and 1.3×1016 cm−2 at rf power of 300 W (0.47 W/cm2) and 500 W (0.78 W/cm2), respectively. The barrier height of the Schottky electrode formed on the undamaged layer is 0.745 V. The height decreases with increasing rf power and reaches 0.47 V at 0.78 W/cm2. Carrier concentration at the surface of the GaAs channel layer decreases with increasing rf power. The damage can be reduced by annealing at 400 °C for 30 min. For instance, the barrier height at 300 W increases from 0.47 to 0.70 V, and the carrier concentration increases from 7.0×1016 to 1.3×1017 cm−3. However, the carrier concentration cannot recover to the same level as that of an undamaged layer with annealing at 400 °C. The temperature conventionally employed in GaAs electrode annea...