Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
复制标题
通过选择性形成原位掩模生长的 GaInAs 覆盖层来控制窄区域中的 InAs 量子点发射波长
DOI：
10.1143/jjap.44.5677
复制
发表时间：
2004
影响因子：
1.5
通讯作者：
K. Asakawa
中科院分区：
文献类型：
--
作者：
S. Ohkouchi;Yusui Nakamura;H. Nakamura;K. Asakawa
我们已经成功地控制在一个狭窄的区域内的自组装InAs量子点（QD）结构的发射波长。量子点的发射波长通过原位掩模生长的覆盖的GaInAs层局部变化，该掩模可以安装到样品保持器上并在超高真空环境中移除。该掩模能够选择性生长高质量的自组装量子点，所需的发射波长范围为1.23 µm至1.32 µm。该技术在将量子点与微结构集成到光电功能器件中具有潜在的应用前景。
We have succeeded in controlling the emission wavelength of a self-assembled InAs quantum dot (QD) structure in a narrow region. The emission wavelength of the QDs was varied locally by a covered GaInAs layer grown with an in situ mask, which can be fitted to the sample holder and removed in an ultra-high-vacuum environment. This mask enables the selective growth of high-quality self-assembled QDs with the desired emission wavelengths ranging from 1.23 µm to 1.32 µm. This technique has potential applications in the integration of microstructures with QDs into optoelectronic functional devices.