Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes
Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes
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调制 p 掺杂 1310 nm InAs/GaAs 量子点激光材料和超短腔法布里-珀罗和分布式反馈激光二极管的开发
DOI：
10.1021/acsphotonics.7b01355
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发表时间：
2018-03-01
期刊：
影响因子：
7
通讯作者：
Zheng, Changcheng
中科院分区：
文献类型：
--
作者：
Li, Qizhu;Wang, Xu;Zheng, Changcheng
通过蚀刻多层InAs/GaAs量子点（QD）激光结构，去除p侧A1GaAs包层，研究其温度依赖性光致发光（PL）特性。采用分子束外延（MBE）和生长后退火工艺制备了未掺杂的、p掺杂的、未掺杂的和p掺杂的四个量子点样品进行比较。其中，与未掺杂的QD样品相比，调制p掺杂的QD样品的PL光谱的温度依赖特性要小得多，并且对混合不敏感。这是由于调制p掺杂的影响，它可以抑制孔在紧密间隔的能级上的热展宽，并显著抑制量子点与其周围基质之间的in /Ga互扩散。这些结果为高质量有源区和QD激光二极管包层的MBE生长选择提供了更大的自由度。调制p掺杂QD材料的优越特性已经自然地转移到激光器件上。连续波极化子(GS)激光实现了在p型QD法布里-珀罗(.)和横向耦合分布反馈(LC-DFB)狭窄的山脊激光用短腔长度没有面涂料,1315海里的GS激光被发现与400年ism .激光腔长度,而单纵模激光与一个非常大的可调范围的140 nm和侧模式实现51 dB的抑制率LC-DFB激光。这一工作证明了InAs/GaAs量子点激光器在高速光纤通信中的巨大发展潜力。
Multiple-layer InAs/GaAs quantum dot (QD) laser structures were etched to remove the p-side A1GaAs cladding layers to investigate the temperature-dependent photoluminescence (PL) characteristics. Four QD samples, including undoped as grown QDs, p-doped as grown QDs, undoped annealed QDs, and p-doped annealed QDs, were prepared by molecular beam epitaxy (MBE) and a postgrowth annealing process for comparison. Among them, modulation p-doped QD samples exhibit much less temperature dependent characteristics of PL spectra and notable insensitivity to intermixing compared to undoped ones. This is attributed to the effects of modulation p-doping, which can inhibit holes' thermal broadening in their closely spaced energy levels and significantly suppress In/Ga interdiffusion between QDs and their surrounding matrix. These results provide greater freedom in the choice of MBE growth for high-quality active regions and claddings of QD laser diodes. The superior features of the modulation p-doped QD materials have been transferred naturally to the laser devices. The continuous-wave ground-state (GS) lasing has been realized in both p-doped QD Fabry-Perot (F-P) and laterally coupled distributed-feedback (LC-DFB) narrow ridge lasers with very short cavity length without facet coatings, in which a 1315 nm GS lasing has been found in a F-P laser with a 400 ism cavity length, while single longitudinal mode lasing with a very large tunable range of 140 nm and side mode suppression ratio of 51 dB is achieved in an LC-DFB laser. This work demonstrates great development potential of InAs/GaAs QD lasers for applications in high-speed fiber-optic communication.