X-RAY PHOTOEMISSION-STUDY OF Y-PROMOTED OXIDATION OF THE SI(100) SURFACE
X-RAY PHOTOEMISSION-STUDY OF Y-PROMOTED OXIDATION OF THE SI(100) SURFACE
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DOI：
10.1016/0039-6028(91)90165-o
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发表时间：
1991-03-01
期刊：
影响因子：
1.9
通讯作者：
IGNATIEV, A
中科院分区：
文献类型：
--
作者：
MESARWI, A;IGNATIEV, A
用X射线光电子能谱研究了钇覆盖层与原子级洁净Si（100）表面的相互作用。 还研究了Y覆盖层对硅氧化的影响。 发现钇在硅上的生长可以用三步机制来解释。 在低覆盖率（θ小于或等于2ML）下，钇沉积在硅的顶部上，这与从Y覆盖层到硅的电荷转移相关联。 在2和5ML覆盖率之间，硅扩散通过Y覆盖层，并且在5ML以上，金属Y沉积在硅的顶部上。 此外，发现钇覆盖层显著增强Si（100）表面的氧化。 在5 ML Y覆盖度下，所获得的SiO2氧化物比清洁的未促进的Si（100）表面所获得的SiO2氧化物厚多达15倍。
The interaction of yttrium overlayers with an atomically clean Si(100) surface has been studied by X-ray photoemission. Also studied, were the effects of Y overlayers on the oxidation of silicon. It is found that the growth of yttrium on silicon can be explained by a three-step mechanism. At low coverage (theta less-than-or-equal-to 2 ML) yttrium deposits on top of silicon associated with charge transfer from the Y overlayer to the silicon. Between 2 and 5 ML coverage silicon diffuses through the Y overlayer, and above 5 ML a metallic Y is deposited on top of the silicon. In addition, yttrium overlayers were found to significantly enhance the oxidation of the Si(100) surface. At 5 ML Y coverage the obtained SiO2 oxides were up to a factor of 15 thicker than those obtained for the clean unpromoted Si(100) surface.