DEPFET detectors for future electron-positron colliders
DEPFET detectors for future electron-positron colliders
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DOI：
10.1088/1748-0221/10/11/c11002
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发表时间：
2015-11
影响因子：
1.3
通讯作者：
C. Marinas
中科院分区：
文献类型：
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作者：
C. Marinas
DEPFET合作开发高度颗粒化的超薄像素探测器，用于未来正负电子对撞机实验中出色的顶点重建。DEPFET传感器，通过在完全耗尽的硅体上集成场效应晶体管，提供同时的位置敏感检测器能力和像素放大。最新的DEPFET原型的表征已经证明，对于50微米的传感器厚度，可以实现足够的信噪比和出色的单点分辨率。接近最终的辅助ASIC已经被生产出来，并被发现以所需的读出速度操作最新一代的DEPFET像素检测器。一个完整的检测器概念正在开发的贝儿II实验在新的日本超级香料工厂。DEPFET不仅是贝儿II顶点探测器的首选技术，也是ILC的主要候选技术。因此，在这篇文章中，DEPFET的研究与发展计划的地位进行了审查，在未来的正负电子对撞机的顶点探测器的要求。
The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future electron-positron collider experiments. A DEPFET sensor, by the integration of a field effect transistor on a fully depleted silicon bulk, provides simultaneous position sensitive detector capabilities and in pixel amplification. The characterization of the latest DEPFET prototypes has proven that a adequate signal-to-noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 micrometers. The close to final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the required read-out speed. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a prime candidate for the ILC. Therefore, in this contribution, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future electron-positron collider.