Spin-resolved unoccupied density of states in epitaxial Heusler-alloy films
Spin-resolved unoccupied density of states in epitaxial Heusler-alloy films
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DOI：
10.1103/physrevb.80.020406
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发表时间：
2009-07-01
影响因子：
3.7
通讯作者：
Elmers, H. J.
中科院分区：
文献类型：
--
作者：
Kallmayer, M.;Klaer, P.;Elmers, H. J.
利用圆二色性X射线吸收谱（XMCD）研究了MgO（100）衬底上外延生长的Co-2（FexMn 1-x）Si、Co-2 Fe（Al 1-xSix）和Co-2（Cr 0. 6 Fe 0. 4）Al薄膜的电子性质。考虑到末态电子的相关性，可以从XMCD数据中提取Co原子处的自旋分辨分态密度。实验结果证实了这些合金的预测半金属铁磁性能，并揭示了少数带隙内的费米能级位置的成分依赖性。
We investigate the electronic properties of epitaxial Co-2(FexMn1-x)Si, Co2Fe(Al1-xSix), and Co-2(Cr0.6Fe0.4)Al films on MgO(100) substrates using circular dichroism in x-ray absorption spectroscopy (XMCD). Considering final-state electron correlations, the spin-resolved partial density of states at the Co atom can be extracted from XMCD data. The experimental results corroborate the predicted half-metallic ferromagnetic properties of these alloys and reveal a compositional dependence of the Fermi energy position within the minority band gap.