Photoinduced Metal-to-Insulator Transition in a Manganite Thin Film
Photoinduced Metal-to-Insulator Transition in a Manganite Thin Film
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DOI：
10.1103/physrevlett.101.177403
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发表时间：
2008-10-24
影响因子：
8.6
通讯作者：
Miyano, K.
中科院分区：
文献类型：
--
作者：
Takubo, N.;Onishi, I.;Miyano, K.
通过输运测量和x射线光发射光谱监测，在多临界点附近的锰酸盐薄膜Pr(0.55)(Ca(0.75)Sr(0.25))(0.45)MnO(3)中证实了持久的光诱导金属到绝缘体的转变。结合先前报道的反向效应，即光致绝缘体到金属的转变，发现金属相和绝缘相的相对稳定性在80k左右在一个非常宽的磁滞回线中间互换，这是由于远程弹性能而产生的大势垒的表现。结果表明，光子通过电子激发的中间态比通过热模式更有效地克服势垒。
A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr(0.55)(Ca(0.75)Sr(0.25))(0.45)MnO(3), near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode.