GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
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DOI：
10.1109/led.2010.2048996
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发表时间：
2010-07-01
影响因子：
4.9
通讯作者：
Ambacher, O.
中科院分区：
文献类型：
--
作者：
Lim, T.;Aidam, R.;Ambacher, O.
GaN基高电子迁移率晶体管（HEMT）具有几乎无应变的高Al含量四元势垒和高达1590 cm（2）/V的电子迁移率。采用分子束外延（MBE）技术在4 H-SiC上生长了SiO2薄膜。具有150 nm栅极长度的加工器件表现出高直流性能，最大电流密度为2.3 A/mm，非本征电流密度高达675 mS/mm，是迄今为止报道的任何III-N晶体管的最高值之一。我们进一步提出，据我们所知，在10 GHz的MBE生长的GaN HEMT的第一次功率测量与近晶格匹配的InAlGaN势垒实现47%的功率增加效率在10 V和5.6 W/mm的输出功率密度在30 V的偏压。
GaN-based high electron mobility transistors (HEMTs) with a nearly strain-free high-Al-content quaternary barrier and electron mobilities up to 1590 cm(2)/V . s have been grown on 4H-SiC using molecular beam epitaxy (MBE). The processed devices with 150-nm gate length exhibit a high dc performance with a maximum current density of 2.3 A/mm and an extrinsic transconductance up to 675 mS/mm that is among the highest values reported until now for any III-N transistor. We further present, to our knowledge, the first power measurements at 10 GHz of MBE-grown GaN HEMTs with nearly lattice-matched InAlGaN barrier achieving 47% power-added efficiency at 10 V and an output power density of 5.6 W/mm at 30-V bias.