Planar-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
Planar-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
复制标题
原子力显微镜制备的非易失性存储器平面型铁磁隧道结
DOI：
10.1143/jjap.40.128
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发表时间：
2001
影响因子：
1.5
通讯作者：
J. Shirakashi
中科院分区：
文献类型：
--
作者：
Y. Takemura;J. Shirakashi
提出了一种基于平面型铁磁单电子晶体管的非易失性磁存储器。在库仑阻塞下，由共隧道电流主导的读出信号能够实现存储器的低功率操作。该器件室温工作所需的小隧道结可以由原子力显微镜纳米氧化技术制备的平面型隧道结组成。
A nonvolatile magnetic memory based on a planar-type ferromagnetic single electron transistor is proposed. A sense signal dominated by a co-tunneling current under Coulomb blockade enables a low-power operation of the memory. The small tunnel junctions required for a room temperature operation of the device can be consisted of planar-type tunnel junctions fabricated by a nano-oxidation technique using atomic force microscope.