XPS Study of N-doped TiOx Thin Films Prepared By DC Reactive Magnetron Sputtering
XPS Study of N-doped TiOx Thin Films Prepared By DC Reactive Magnetron Sputtering
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直流反应磁控溅射制备N掺杂TiOx薄膜的XPS研究
DOI：
10.4028/www.scientific.net/kem.249.457
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
X. Zhao
中科院分区：
文献类型：
--
作者：
Q.N. Zhao;C.L. Li;X. He;X. Zhao
采用直流反应磁控溅射技术，在Ar、O2、N2混合介质中制备了n掺杂TiOx薄膜。利用x射线光电子能谱（XPS）研究了膜的组成与N2分压与总压之比的关系。XPS结果表明，N1s谱线由三个结合能分别为396.0±0.2eV、399.9±0.2eV和402.0±0.4eV的峰组成；对于增大的比率，可以观察到两种情况。当比值为0.01 ~ 0.05时，随着比值的增大，396.0±0.2eV下的N1s浓度从0.002增加到0.007,531.9±0.2eV下的O1s浓度从10.8增加到62.7；当比值为0.05 ~ 0.11时，随着比值的增大，396.0±0.2eV下的N1s浓度从0.007降低到0.003,531.9±0.2eV下的O1s浓度从62.7降低到18.7。结合能为531.9±0.2eV的O1s与羟基对应。随着比值的增大，O/Ti的原子比在1.98 ~ 1.93之间变化，Ti的化学状态保持在Ti。396.0±0.2eV下N1s越多，531.9±0.2eV下O1s越多，即n掺杂TiO2膜表面羟基（OH）越多。
The N-doped TiOx films, coated on glass substrates, were prepared by DC reactive magnetron sputtering using Ti metal target in a mixture of Ar, O2 and N2. The dependence of the films composition on ratio of N2 partial pressure to total pressure was investigated using X-ray photoelectron spectroscopy (XPS). The XPS results show that N1s line is composed of three peaks at the binding energies of 396.0±0.2eV, 399.9±0.2eV and 402.0±0.4eV, respectively; for an increasing ratio two regimes are observed. For the ratio between 0.01 and 0.05, with the increase of the ratio, the N1s concentration at 396.0±0.2eV increases from 0.002 to 0.007 and the O1s concentration at 531.9±0.2eV increases from 10.8 to 62.7; for the ratio between 0.05 and 0.11, with the increase of the ratio, the N1s concentration at 396.0±0.2eV decreases from 0.007 to 0.003 and the O1s concentration at 531.9±0.2eV decreases from 62.7 to 18.7. The O1s at a binding energy 531.9±0.2eV corresponds to hydroxyl groups. With the increase of the ratio, the atomic ratio O/Ti varies from 1.98 to 1.93, and the chemical state of the Ti is kept at Ti. The more N1s at 396.0±0.2eV, the more O1s at 531.9±0.2eV, that is, more hydroxyl groups (OH) on the surface of the N-doped TiO2 film.