600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology
600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology
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DOI：
10.1109/ispsd.2007.4294939
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发表时间：
2007-05
期刊：
影响因子：
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通讯作者：
H. Rüthing;F. Hille;F. Niedernostheide;H. Schulze;B. Brunner
中科院分区：
文献类型：
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作者：
H. Rüthing;F. Hille;F. Niedernostheide;H. Schulze;B. Brunner
近几年来，反向导电IGBT已经大量生产出来，用于软开关应用，如电感加热器、微波炉或灯镇流器。为了满足硬开关应用的要求，例如冰箱、空调或通用驱动器中的逆变器，必须优化集成二极管的反向恢复行为。对于这种优化，有两个很有希望的概念是基于减少电荷载流子寿命或反闩锁p+注入剂量。结果表明，这两个概念的结合将使器件具有良好的反向恢复特性、低的正向和反向压降以及良好的沟道场阻型IGBT的过电流关断能力。
Reverse conducting IGBTs are fabricated in a large productive volume for soft switching applications, such as inductive heaters, microwave ovens or lamp ballast, since several years. To satisfy the requirements of hard switching applications, such as inverters in refrigerators, air conditioners or general purpose drives, the reverse recovery behavior of the integrated diode has to be optimized. Two promising concepts for such an optimization are based on a reduction of the charge- carrier lifetime or the anti-latch p+ implantation dose. It is shown that a combination of both concepts will lead to a device with a good reverse recovery behavior, low forward and reverse voltage drop and excellent over current turn- off capability of a trench field-stop IGBT.