Characterization of Transparent Zinc Oxide Films Prepared by Electrochemical Reaction
Characterization of Transparent Zinc Oxide Films Prepared by Electrochemical Reaction
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DOI：
10.1149/1.1837727
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发表时间：
1997-06
影响因子：
3.9
通讯作者：
M. Izaki;T. Omi
中科院分区：
文献类型：
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作者：
M. Izaki;T. Omi
采用恒电流阴极沉积法，在335 K的硝酸锌溶液中，在导电玻璃上制备了透明氧化锌（ZnO）薄膜。采用傅里叶变换红外吸收光谱、X射线衍射、扫描电子显微镜、光学透射和吸收研究以及方阻随阴极电流密度变化的测量对沉积的ZnO薄膜进行了表征。制备的ZnO薄膜具有纤锌矿结构，并表现出3.3 eV的光学带隙能量，这是ZnO的特性。在0.05mA/cm{sup 2}的低阴极电流密度下，获得了具有优良电性能的ZnO薄膜。在阴极电流密度为10 mA/cm{sup 2}下，通过电解约20分钟沉积2 μ m厚的ZnO膜，其光学透射率为72%。
Transparent zinc oxide (ZnO) films have been grown by galvanostatic cathodic deposition onto conductive glasses from a simple aqueous zinc nitrate electrolyte maintained at 335 K. The as-deposited ZnO films were characterized with Fourier transform infrared absorption spectroscopy, x-ray diffraction, scanning electron microscopy, optical transmission and absorption studies, and measurement of sheet resistivity as a function of cathodic current density. The ZnO films prepared had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. At a low cathodic current density of 0.05 mA/cm{sup 2}, ZnO films with excellent electrical characteristics have been obtained. A 2 {micro}m thick ZnO film with an optical transmittance of 72% was deposited by electrolysis for approximately 20 min at a cathodic current density of 10 mA/cm{sup 2}.