Study of a 0.35 THz Extended Interaction Oscillator Driven by a Pseudospark-Sourced Sheet Electron Beam
Study of a 0.35 THz Extended Interaction Oscillator Driven by a Pseudospark-Sourced Sheet Electron Beam
复制标题
赝火花源片状电子束驱动的 0.35 THz 扩展相互作用振荡器的研究
DOI：
10.1109/ted.2019.2957760
复制
发表时间：
2020-02
影响因子：
3.1
通讯作者：
Adrian W. Cross
中科院分区：
文献类型：
--
作者：
Jie Xie;Liang Zhang;Huabi Yin;Wenlong He;Kevin Ronald;A. D. R. Phelps;Xiaodong Chen;Jin Zhang;Yasir Alfadhl;Xuesong Yuan;Lin Meng;Adrian W. Cross
介绍了一种由赝火花源片状电子束驱动的0.35THz高功率扩展互作用振荡器。它结合了平面相互作用电路和从PS放电产生的SEB的优点，包括大的束横截面、每单位长度的高增益和高电流密度，以及不需要外部聚焦磁场的额外益处。停留在什么是可实现的微加工技术，公差的Q值，谐振频率和特性阻抗的影响进行了研究。研究了由制造方法引起的表面粗糙度对材料表面欧姆损耗的影响。紫外光刻、电火花加工和变形（UV-LIGA）和纳米计算机数控（Nano-CNC）等先进的微加工技术能够实现高精度和足够光滑的金属表面，被提出用于制造平面结构。研究了PS源SEB中等离子体密度对EIO电路谐振频率的影响。模拟结果表明，在0.35 THz处，随着等离子体密度的增加，输出信号的频率略有上升，输出功率有所下降，这与理论分析相一致。该平面EIO的束-波相互作用模拟预测在~0.35 THz处的峰值输出功率为1.8 kW，使用${1.1} \times {10}^{{7}}$ S/m的电导率的有效值来考虑趋肤深度和表面粗糙度。
A compact high-power extended interaction oscillator (EIO) driven by a pseudospark-sourced (PS-sourced) sheet electron beam (SEB) is presented at 0.35 THz. It combines the advantages of a planar interaction circuit and a SEB generated from the PS discharge, including a large beam cross-section, high gain per unit length, and high current density with the additional benefit of not requiring an external focusing magnetic field. Staying within what is achievable with microfabrication techniques, the influence of tolerance on the Q value, resonance frequency, and characteristic impedance was investigated. The effect of surface roughness caused by the manufacturing method on Ohmic loss of the material surface was studied. The advanced microfabrication techniques of Ultra Violet Lithographie, Galvanik, and Abformung (UV-LIGA) and Nano-computer numerical control (Nano-CNC), which are capable of realizing high precision and a metal surface of sufficient smoothness, were proposed to manufacture the planar structures. The effect of plasma density in PS-sourced SEB on the resonance frequency of the EIO circuit was investigated. The simulation results showed that the output signal had a slight frequency upshift and a decrease of the output power as the plasma density increased at 0.35 THz, which is consistent with the theoretical analysis. Beam–wave interaction simulations for this planar EIO predicted a peak output power of 1.8 kW at ~0.35 THz using an effective value of conductivity of ${1.1} \times {10}^{{7}}$ S/m to take into account the skin depth and surface roughness.
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影响因子：
2.2
作者：
H. Yin;A. Cross;Wenlong He;A. Phelps;K. Ronald;D. Bowes;C. Robertson
通讯作者：
H. Yin;A. Cross;Wenlong He;A. Phelps;K. Ronald;D. Bowes;C. Robertson
影响因子：
3.1
作者：
Jinfeng Zhao;D. Gamzina;Na Li;Ji Li;A. Spear;L. Barnett;M. Banducci;S. Risbud;N. Luhmann
通讯作者：
Jinfeng Zhao;D. Gamzina;Na Li;Ji Li;A. Spear;L. Barnett;M. Banducci;S. Risbud;N. Luhmann
DOI：
10.1109/ted.2005.845799
发表时间：
2005-04
期刊：
Fifth IEEE International Vacuum Electronics Conference (IEEE Cat. No.04EX786)
影响因子：
--
作者：
A. Roitman;D. Berry;B. Steer
通讯作者：
A. Roitman;D. Berry;B. Steer
影响因子：
3.1
作者：
A. Roitman;D. Berry;B. Steer
通讯作者：
A. Roitman;D. Berry;B. Steer
影响因子：
1.5
作者：
H. Yin;A. Cross;W. He;A. Phelps;K. Ronald
通讯作者：
H. Yin;A. Cross;W. He;A. Phelps;K. Ronald