Strong substrate effects of Joule heating in graphene electronics
Strong substrate effects of Joule heating in graphene electronics
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DOI：
10.1063/1.3668113
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发表时间：
2011-12-05
影响因子：
4
通讯作者：
Kim, K. W.
中科院分区：
文献类型：
--
作者：
Li, X.;Kong, B. D.;Kim, K. W.
采用自洽的全带蒙特卡罗电子动力学和三维热传导模拟方法研究了焦耳加热对石墨烯电子性质的影响。几个技术上重要的衬底材料进行检查：SiO2，SiC，六方BN，和金刚石。结果表明，衬底的选择有一个主要的影响，通过热传导和表面极性声子散射。特别是，二氧化硅的导热性差导致显着的焦耳加热和饱和速度退化的石墨烯特征在于1/根n衰减。考虑到整体特性，BN似乎与石墨烯电子应用的其他衬底选择相比是有利的。VC 2011美国物理学会。[doi：10.1063/1.3668113]
The effect of Joule heating on graphene electronic properties is investigated by self-consistent use of full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations. Several technologically important substrate materials are examined: SiO2, SiC, hexagonal BN, and diamond. Results illustrate that the choice of substrate has a major impact via heat conduction and surface polar phonon scattering. Particularly, the poor thermal conductivity of SiO2 leads to significant Joule heating and saturation velocity degradation in graphene characterized by the 1/root n decay. Considering the overall characteristics, BN appears to compare favorably against the other substrate choices for graphene electronic applications. VC 2011 American Institute of Physics. [doi:10.1063/1.3668113]