Electronic two-terminal bistable graphitic memories
Electronic two-terminal bistable graphitic memories
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DOI：
10.1038/nmat2331
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发表时间：
2008-12-01
期刊：
影响因子：
41.2
通讯作者：
Tour, James M.
中科院分区：
文献类型：
--
作者：
Li, Yubao;Sinitskii, Alexander;Tour, James M.
晶体管是电子开关和存储器件的基础，因为它们表现出极高的可靠性，通/断比为10（4）-10（5），并且可以在单个平面衬底上制造数十亿个这种三端子器件。另一方面，具有非线性电流-电压响应的双端器件可以被认为是替代品，只要它们具有大的和可靠的开/关比，并且它们可以使用常规或容易获得的方法大规模制造。在这里，我们报告了由通过化学气相沉积在纳米线上或平面氧化硅顶部生长的石墨片的不连续5-10 nm薄膜组成的双端器件，其表现出巨大而尖锐的室温超导电流-电压行为，非易失性和非破坏性读取存储器，开/关比高达10（7），开关时间高达1 μ s（测试极限）。提出了一种纳米机电机制的异常明显的开关行为的设备。
Transistors are the basis for electronic switching and memory devices as they exhibit extreme reliabilities with on/off ratios of 10(4)-10(5), and billions of these three-terminal devices can be fabricated on single planar substrates. On the other hand, two-terminal devices coupled with a nonlinear current-voltage response can be considered as alternatives provided they have large and reliable on/off ratios ratios and that they can be fabricated on a large scale using conventional or easily accessible methods. Here, we report that two-terminal devices consisting of discontinuous 5-10 nm thin films of graphitic sheets grown by chemical vapour deposition on either nanowires or atop planar silicon oxide exhibit enormous and sharp room-temperature bistable current-voltage behaviour possessing stable, rewritable, non-volatile and non-destructive read memories with on/off ratios of up to 10(7) and switching times of up to 1 mu s (tested limit). A nanoelectromechanical mechanism is proposed for the unusually pronounced switching behaviour in the devices.