Tunable angular-dependent magnetoresistance correlations in magnetic films and their implications for spin Hall magnetoresistance analysis
Tunable angular-dependent magnetoresistance correlations in magnetic films and their implications for spin Hall magnetoresistance analysis
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磁性薄膜中可调谐角度相关磁阻相关性及其对自旋霍尔磁阻分析的影响
DOI：
10.1103/physrevb.93.075309
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发表时间：
2016-02
影响因子：
3.7
通讯作者：
L. Sun
中科院分区：
文献类型：
--
作者：
L. K. Zou;Y. Zhang;L. Gu;J. W. Cai;L. Sun
角相关磁电阻（MR）被认为是自旋电子材料的固有特性，表现为经典的各向异性MR（AMR）现象和最近出现的自旋霍尔MR（SMR）。到目前为止，各向同性AMR，AMR与几何尺寸效应和界面效应，SMR已被单独处理，以解释不同的MR相关性在不同的系统中观察到。目前的研究表明，所有四种类型的MR相关性可以重现在铁薄膜取决于膜的厚度，纹理，界面和形态。结果表明，以前的解释薄膜MR相关性是不完整的，它是不合适的，使用一个特定的MR角度依赖相关性作为唯一的标准，在确定AMR的起源或确定SMR的排他性存在。
Angular-dependent magnetoresistance (MR) is considered to be intrinsic to spintronic materials, represented by the classical anisotropic MR (AMR) phenomenon and the recently emerged spin Hall MR (SMR). So far, isotropic AMR, AMR with geometric size effect and interfacial effect, and SMR have been treated separately to explain distinct MR correlations observed in various systems. Current study shows all four types of MR correlations can be reproduced in Fe thin films depending on the film thickness, texture, interface, and morphology. Results suggest previous explanations of the thin-film MR correlations are incomplete and it is inappropriate to use a specific MR angular-dependent correlation as the sole criterion in determining the origin of AMR or ascertaining the exclusive existence of SMR.