Improved luminescence intensity and stability of nanocrystalline silicon due to the passivation of nonluminescent states
Improved luminescence intensity and stability of nanocrystalline silicon due to the passivation of nonluminescent states
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DOI：
10.1063/1.1913796
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发表时间：
2005-05-15
影响因子：
3.2
通讯作者：
Hirakuri, K
中科院分区：
文献类型：
--
作者：
Sato, K;Hirakuri, K
用电子自旋共振和光致发光测量方法研究了氢、氧钝化纳米硅的发光强度和稳定性。低密度P-ce'心（发光态）和高密度P-b心（非发光态）的氧钝化nc-Si显示出微弱的红光发射。当nc-Si表面用氢原子和氧原子钝化后，其红光强度随表面P-ce'心的增加和P-b心的减少而增加一个数量级以上。由于nc-Si中只有P-ce'心而没有P-b心，所以nc-Si的红色发光在老化超过一年后仍很稳定。这些结果是一个强有力的迹象表明，提高发光强度和稳定性是由于非发光状态的氢和氧钝化。(c)2005年美国物理学会。
Luminescence intensity and stability of nanocrystalline silicon (nc-Si) passivated with oxygen and hydrogen atoms have been studied by using electron-spin resonance and photoluminescence measurements. The oxygen-passivated nc-Si with low-density P-ce' centers (luminescent states) and high-density P-b centers (nonluminescent states) exhibited weak red luminescence. When the nc-Si surface was passivated with hydrogen atoms in addition to oxygen atoms using a hydrofluoric acid solution treatment, the intensity of red luminescence increased more than one order of magnitude with an increase of P-ce' centers and reduction of P-b centers on the surface. Furthermore, the red luminescence of nc-Si was very stable even after aging beyond one year, owing to the existence of only P-ce' centers and the absence of P-b centers. These results are a strong indication that the improved luminescence intensity and stability is due to the hydrogen and oxygen passivation of nonluminescent states. (c) 2005 American Institute of Physics.