Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor
Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor
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DOI：
10.1063/1.4893748
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发表时间：
2014-02
影响因子：
4
通讯作者：
A. Setiadi;M. Akai‐Kasaya;A. Saito;Y. Kuwahara
中科院分区：
文献类型：
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作者：
A. Setiadi;M. Akai‐Kasaya;A. Saito;Y. Kuwahara
我们在平坦电极上制作了单壁碳纳米管场效应晶体管器件，其中金属电极与衬底之间没有高度差。使用底部接触技术制造的SWNT-FET具有一些优点，例如SWNTs不受电子辐照，与所需的金属电极直接接触，并且可以在沉积之前或之后功能化。然而，SWNT可以在与金属电极的接触点处弯曲，导致器件的不同电特性。由于单壁碳纳米管和衬底之间的强吸引相互作用，通过使用扁平电极，短沟道长度器件中的单壁碳纳米管直接结的数量急剧增加。与非平坦电极相比，平坦电极显示出它们的空穴和电子迁移率之间的更好的平衡，即双极FET特性。据认为，弯曲的单壁碳纳米管在非平坦的电极器件的结果在较高的肖特基势垒的电子。
We fabricated single-walled carbon nanotube (SWNT) field-effect transistor (FET) devices on flattened electrodes, in which there are no height difference between metal electrodes and the substrate. SWNT-FET fabricated using bottom contact technique have some advantages, such that the SWNTs are free from electron irradiation, have direct contact with the desired metal electrodes, and can be functionalized before or after deposition. However, the SWNTs can be bent at the contact point with the metal electrodes leading to a different electrical characteristic of the devices. The number of SWNT direct junctions in short channel length devices is drastically increased by the use of flattened electrodes due to strong attractive interaction between SWNT and the substrate. The flattened electrodes show a better balance between their hole and electron mobility compared to that of the non-flattened electrodes, that is, ambipolar FET characteristic. It is considered that bending of the SWNTs in the non-flattened electrode devices results in a higher Schottky barrier for the electrons.