Photoconductivity in n-type beta -FeSi2 single crystals.
Photoconductivity in n-type beta -FeSi2 single crystals.
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n 型 β-FeSi2 单晶的光电导性。
DOI：
10.1103/physrevb.52.20
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Siminel
中科院分区：
文献类型：
--
作者：
Arushanov;Bucher;Kloc;Kulikova;Kulyuk;Siminel
在80 ~ 250 K的温度范围内，观察了β-FeSi 2单晶的光电导率。测定了85 K时的能隙0.89 eV及其温度依赖性。计算声子平均能量为55 meV，电子-声子耦合参数S= 2.75。采用双中心模型解释了观察到的光电导率猝灭现象。测定了供体和受体活化能分别为70 meV和120 meV，以及晶格散射引起的空穴迁移率。
Photoconductivity in β-FeSi 2 single crystals was observed in the temperature range of 80–250 K. The energy gap, 0.89 eV at 85 K, and its temperature dependence were determined. The values of the average phonon energy, 55 meV, and the electron-phonon coupling parameter, S= 2.75, were evaluated. The observed quenching of photoconductivity is explained in assuming the two-center model. The donor and acceptor activation energy of 70 and 120 meV, respectively, as well as the hole mobility due to lattice scattering were determined.