Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
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用于太阳能电池应用的高导电 n 型氢化纳米晶立方 SiC 薄膜的低温沉积
DOI：
10.1143/jjap.45.l432
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发表时间：
2006
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
S. Miyajima;K. Haga;A. Yamada;M. Konagai
采用热线化学气相沉积法在300℃以下的低温下制备了高导电性n型氢化立方碳化硅(NC-3C-SiC：H)薄膜，发现六甲基二硅氮烷是n型掺杂的有效掺杂剂。N型NC-3C-SiC：H薄膜的暗电导率和激活能分别为5.32 S/厘米和25 meV。我们还制作了NC-3C-SiC：H/晶硅异质结二极管和太阳电池。这些器件具有良好的整流特性，转换效率达到13.4%。
Highly conductive n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films have been deposited by hot-wire chemical vapor deposition at low temperatures below 300 °C. We found that hexamethyldisilazane is an effective dopant for n-type doping into nc-3C-SiC:H films. Dark conductivity and its activation energy for the n-type nc-3C-SiC:H film were found to be 5.32 S/cm and 25 meV. We also fabricated nc-3C-SiC:H/crystalline silicon heterojunction diodes and solar cells. These devices showed good rectifying characteristics, and conversion efficiency of 13.4% was achieved.