Many-body effects in InAs/GaAs quantum dot laser structures
Many-body effects in InAs/GaAs quantum dot laser structures
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InAs/GaAs 量子点激光器结构中的多体效应
DOI：
10.1063/1.3496011
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发表时间：
2010
影响因子：
4
通讯作者：
P. Blood
中科院分区：
文献类型：
--
作者：
I. O'Driscoll;M. Hutchings;P. Smowton;P. Blood
我们测量了GaInAs量子点激光结构的增益峰值能量，相对于吸收峰，作为注入的函数。我们使用了一个计算来消除非均匀分布中状态填充的影响，并估计了点中的载流子密度。我们已经确定了与许多体效应相关的位移，在室温下，在激光操作的典型注入水平（每个点约2.2个电子）下，位移高达8 meV，产生10 cm-1的峰值模态增益。
We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorption peak, as a function of injection. We have used a calculation to remove the effects of state filling in the inhomogeneous distribution and to estimate the carrier density in the dots. We have identified shifts, which we associate with many body effects, of up to 8 meV at room temperature at injection levels typical for laser operation of about 2.2 electrons per dot, producing a peak modal gain of 10 cm-1.