Ultimate Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistor and Its Three-Dimensional Integrated Circuits
Ultimate Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistor and Its Three-Dimensional Integrated Circuits
复制标题
终极垂直栅全能金属氧化物半导体场效应晶体管及其三维集成电路
DOI：
10.1016/j.mssp.2021.106046
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发表时间：
2021
影响因子：
4.1
通讯作者：
and Tetsuo Endoh
中科院分区：
文献类型：
--
作者：
Shujun Ye;Kikuo Yamabe;and Tetsuo Endoh
根据国际器件和系统路线图，环栅（GAA）金属氧化物半导体场效应晶体管（MOSFET）将成为未来几十年集成电路的主要器件。然而，垂直和横向GAA-MOSFET目前都面临两个问题：10纳米以下器件的巨大差异以及集成方面的挑战。特别是，垂直GAA-MOSFET具有与所有其他MOSFET不同的不对称源极/漏极结构，导致不利的电气特性。 GAA-MOSFET的传统制造工艺很可能是造成上述问题的主要原因，阻碍了传统GAA-MOSFET在集成电路中的应用。在这项工作中，提出了一种新方法来制造最终的垂直GAA（UVGAA）MOSFET，该MOSFET可以表现出对称源极/漏极结构、显着降低的方差、高产量、高集成度、高性能（高速和低能耗）和低成本。此外，还开发了一种由三维（3D）集成电路组成的新架构，该集成电路基于所提出的UVGAA-MOSFET，其中存储单元和/或逻辑器件在垂直方向上堆叠。这项工作为具有新 3D 架构的下一代集成电路铺平了道路。
According to theInternational Roadmap for Devices and Systems, gate-all-around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) will become the main devices in integrated circuits over the next few decades. However, both vertical and lateral GAA-MOSFETs currently face two issues: large variance in sub-10-nm devices and challenges in integration. In particular, vertical GAA-MOSFETs have an asymmetric source/drain structure that is different from that of all other MOSFETs, resulting in unfavorable electrical characteristics. The traditional fabrication process of GAA-MOSFETs is likely the main cause of the above problems, preventing the application of traditional GAA-MOSFETs in integrated circuits. In this work, a novel method is proposed to fabricate the ultimate vertical GAA (UVGAA) MOSFET that may exhibit a symmetric source/drain structure, significantly reduced variance, high yield, high integration, high performance (high speed and low energy consumption), and low cost. Furthermore, a new architecture consisting of a three-dimensional (3D) integrated circuit based on the proposed UVGAA-MOSFETs where memory cells and/or logic devices are stacked in the vertical direction is developed. This work paves the way for next-generation integrated circuits with a new 3D architecture.