Auger recombination in 4H-SiC: Unusual temperature behavior
Auger recombination in 4H-SiC: Unusual temperature behavior
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DOI：
10.1063/1.120309
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发表时间：
1997-12-01
影响因子：
4
通讯作者：
Hallin, C
中科院分区：
文献类型：
--
作者：
Galeckas, A;Linnros, J;Hallin, C
利用时间分辨光诱导吸收技术研究了4H-SiC材料的带对带俄歇复合。在300-565 K的温度区间内，通过高掺杂n型4H-SiC和低掺杂4H-SiC外延层中电子-空穴等离子体的动力学计算得到了俄歇复合系数。在此范围内，其值从gamma(3) = (7 +/- 1) × 10(-31) cm(6) s（-1）减小到gamma(3) = (3 +/- I) × 10(-32) cm(6) s（-1）。观察到的俄歇复合率随温度的显著降低与俄歇过程的温度依赖性阈值能量有关。(C) 1997年美国物理研究所。
The band-to-band Auger recombination in 4H-SiC material Is studied using a time-resolved photoinduced absorption technique. The Auger recombination coefficient is derived from the kinetics of electron-hole plasma in heavily doped n-type 4H-SiC and in low-doped 4H-SiC epitaxial layers in the temperature interval 300-565 K. Within this range, its value decreases from gamma(3) = (7 +/- 1) x 10(-31) cm(6) s(-1) to gamma(3) = (3 +/- I) x 10(-32) cm(6) s(-1). The observed pronounced reduction of Auger recombination rate with temperature is correlated to temperature dependent threshold energy of Auger process. (C) 1997 American Institute of Physics.