The impacts of fabrication error in Si wire-waveguides on spectral variation of coupled resonator optical waveguides
The impacts of fabrication error in Si wire-waveguides on spectral variation of coupled resonator optical waveguides
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DOI：
10.1016/j.mee.2015.11.015
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发表时间：
2016-04-20
影响因子：
2.3
通讯作者：
Mogami, Tohru
中科院分区：
文献类型：
--
作者：
Horikawa, Tsuyoshi;Shimura, Daisuke;Mogami, Tohru
我们通过实验研究了硅线波导的制造误差对五阶耦合谐振器光波导 (CROW) 光谱变化的影响。在这些波导器件的制造过程中，采用了采用 ArF 浸没式光刻技术的 40 纳米节点 CMOS 技术。 CROWS 的表征是通过使用自动光学晶圆级探测系统来完成的。至于440纳米宽/220纳米厚的波导的制造误差，单个300毫米晶圆的波导横截面尺寸的标准偏差被证实为宽度0.83纳米，高度0.24纳米。在单个晶圆中制造的 CROW 表现出彼此非常相似的谐振峰形状，并且谐振波长的标准偏差也非常小，为 0.67 nm，这与制造误差的理论估计一致。这些结果表明，使用 ArF 浸没式光刻技术进行精确的工艺控制对于宽带光学互连的可重复器件制造是有效的。 (C) 2015 Elsevier B.V. 保留所有权利。
We experimentally investigate the impacts of fabrication error in Si wire-waveguides on the spectral variation of 5th-order coupled resonator optical waveguides (CROWs). In the fabrication of these waveguide devices, 40-nm-node CMOS technology with ArF immersion lithography was used. The characterization of the CROWS was done by using an automatic optical wafer-level probing system. As for the fabrication errors in 440-nm-wide/220-nm-thick waveguides, standard deviations in waveguide cross-sectional size for a single 300-mm wafer were confirmed to be 0.83 nm in width and 0.24 nm in height. The fabricated CROWs in a single wafer exhibited quite similar resonant peak shapes to each other, and also showed a remarkably small standard deviation of 0.67 nm in resonant wavelength, which agrees with the theoretical estimation from the fabrication error. These results show that the precise process control using ArF immersion lithography technology is effective to the reproducible device fabrication for wide-bandwidth optical interconnection. (C) 2015 Elsevier B.V. All rights reserved.