Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.
Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.
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DOI：
10.1038/srep32039
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发表时间：
2016-08-18
影响因子：
4.6
通讯作者：
Patanè A
中科院分区：
文献类型：
--
作者：
Di Paola DM;Kesaria M;Makarovsky O;Velichko A;Eaves L;Mori N;Krier A;Patanè A
载流子通过禁带能隙的带间隧穿，称为齐纳隧穿，是一种具有基本和技术意义的现象。它在江崎p-n半导体二极管中的实验观察导致了凝聚态系统中量子隧穿的首次演示和开发。在这里，我们展示了一种新型的齐纳隧穿，涉及到电子通过零维（0 D）状态的共振传输。在我们的器件中，中红外（MIR）合金In（AsN）的窄量子阱被放置在p-i-n二极管的本征（i）层中。氮在量子阱中的结合产生了位于纳米尺度上的0 D态。这些能级提供了中间态，充当电子隧穿二极管的“垫脚石”，并产生了对温度依赖性较弱的负微分电阻（NDR）。这些电子输运性质具有开发纳米级非线性元件的潜力，用于电子学和MIR光子学。
Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.